Semiconductor device and method of manufacturing semiconductor device
US10580648B2 · kind B2 · utility
1Cited by
0References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 4, 2018 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Sep 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/875
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first aspect of a present inventive subject matter, a semiconductor device includes a first semiconductor layer that is an electron-supply layer containing as a major component a first semiconductor crystal with a metastable crystal structure; and a second semiconductor layer that is an electron-transit layer containing as a major component a second semiconductor crystal with a hexagonal crystal structure. The first semiconductor crystal contained in the first semiconductor layer is different in composition from the second semiconductor crystal comprised in the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.