Method of manufacturing semiconductor device
US10580688B2 · kind B2 · utility
0Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2018 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Jul 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/24
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of fabricating a semiconductor device. The method comprises stacking an etching target layer, a first mask layer, an under layer, and a photoresist layer on a substrate, irradiating extreme ultraviolet (EUV) radiation on the photoresist layer to form a photoresist pattern, and performing a nitrogen plasma treatment on the photoresist pattern while using the first mask layer as an etching stop layer, the performing continuing until a top surface of the first mask layer is exposed. During the performing, the under layer is etched to form an under pattern below the photoresist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.