Solid-state imaging device having light shielding films, method of manufacturing the same, and electronic apparatus
US10580814B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 1, 2017 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Mar 1, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present technology relates to a solid-state imaging device that can further reduce the influence the film stress generated in an upper electrode has on a photoelectric conversion film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. A solid-state imaging device includes: a photoelectric conversion film formed on the upper side of a semiconductor substrate; and two or more light shielding films formed at positions higher than the photoelectric conversion film with respect to the semiconductor substrate. The present technology can be applied to solid-state imaging devices, electronic apparatuses, and the like, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.