Method of making and device having a common electrode for transistor gates and capacitor plates
US10580822B2 · kind B2 · utility
0Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2018 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Oct 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/198
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a circuit comprising a first thin film transistor (TFT) and storage capacitor having a first electrode and a second electrode configured to face to each other. A second TFT is coupled to the capacitor, wherein a first gate electrode of the first TFT, a first electrode of the storage capacitor and a second gate electrode of the second TFT are integrally formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.