Patent · US Active

Memory block erasure

US10585619B1 · kind B1 · utility

4Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 15, 2018
Grant dateMar 10, 2020
Priority date
Expiry dateNov 15, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/16
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Embodiments of memory block erasure are described herein. An aspect includes determining a first word line set consisting of a first plurality of word lines. Another aspect includes activating the first plurality of word lines, such that a respective memory cell that is connected to each of the first plurality of word lines is erased by the activation of the first plurality of word lines. Another aspect includes determining a second word line set, wherein the second word line set consists of the first word line set and a second plurality of word lines. Another aspect includes simultaneously activating the first plurality of word lines and the second plurality of word lines, such that a respective memory cell that is connected to each of the second plurality of word lines is erased by the activation of the first plurality of word lines and the second plurality of word lines.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.