Patent · US Active

Uniform CMP polishing method

US10586708B2 · kind B2 · utility

0Cited by
43References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 5, 2017
Grant dateMar 10, 2020
Priority date
Expiry dateOct 5, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67017
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. The series of biased grooves separate a land area and have inner walls closer to the center and outer walls closer to the outer edge. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations polishes or planarizes the wafer with land areas wet by the overflowing polishing fluid.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.