Methods of fabricating semiconductor devices
US10586709B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2018 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Jul 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating a semiconductor device are provided including sequentially forming a first hard mask layer, a second hard mask layer and a photoresist layer on a target layer, patterning the photoresist layer to form a photoresist pattern, sequentially patterning the second hard mask layer and the first hard mask layer using the photoresist pattern as an etching mask to form a first hard mask pattern and a second hard mask pattern on the first hard mask pattern, and etching the target layer using the first hard mask pattern and the second hard mask pattern as an etching mask, wherein the second hard mask layer includes impurity-doped amorphous silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.