Integrated trench capacitor formed in an epitaxial layer
US10586844B2 · kind B2 · utility
2Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2018 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Jun 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench capacitor includes at least one epitaxial semiconductor surface layer on a semiconductor substrate having a doping level that is less than a doping level of the semiconductor substrate. A plurality of trenches are formed through at least one half of a thickness of the epitaxial semiconductor surface layer. The epitaxial semiconductor surface layer is thicker than a depth of the plurality of trenches. At least one capacitor dielectric layer lines a surface of the trenches. At least one trench fill layer on the dielectric layer fills the trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.