Superconductor-based transistor
US10586910B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 26, 2018 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Jul 26, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4473
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.