Thin film transistor, fabricating method and driving method thereof, and display device
US10586937B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 30, 2018 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Mar 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
Abstract
The present application provides a thin film transistor, a method for fabricating the same, a method for driving the same, and a display device. The thin film transistor includes a gate pattern, a gate insulation layer, an active layer pattern, a source/drain pattern, and a passivation layer. The active layer pattern is made of a carbon nanotube material, and the passivation layer is made of a charge-resistant material capable of reducing mobile charges on a surface of the carbon nanotube material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.