Drive circuit of power semiconductor switch
US10587258B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2019 |
| Grant date | Mar 10, 2020 |
| Priority date | — |
| Expiry date | Jun 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/691
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A drive circuit of a power semiconductor switch includes: a pulse modulation circuit having a first terminal configured to receive a fault signal, an isolation transformer, and a pulse demodulation circuit; when there is no fault signal being received, the pulse modulation circuit outputs a first turn on pulse signal and a first turn off pulse signal via the isolation transformer and the pulse demodulation circuit to charge/discharge a gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned on and turned off at a first speed; when the fault signal is received, the pulse modulation circuit outputs a second turn off pulse signal via the isolation transformer and the pulse demodulation circuit to discharge the gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned off at a second speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.