Method for forming a thin film comprising an ultrawide bandgap oxide semiconductor
US10593544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2017 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Dec 2, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for depositing a high-quality thin films of ultrawide bandgap oxide semiconductors at growth rates that are higher than possible using prior-art methods. Embodiments of the present invention employ LPCVD deposition using vapor formed by evaporating material as a precursor, where the material has a low vapor pressure at the growth temperature for the thin film. The vapor is carried to a reaction chamber by an inert gas, such as argon, where it mixes with a second precursor. The reaction chamber is held at a pressure that nucleation of the precursor materials occurs preferentially on the substrate surface rather than in vapor phase. The low vapor pressure of the material gives rise to growth rates on the substrate surface that a significantly faster than achievable using prior-art growth methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.