Patent · US Active

Method for doping semiconductor substrates by means of a co-diffusion process and doped semiconductor substrate produced by means of said method

US10593552B2 · kind B2 · utility

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0References

21Claims

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Assignee

Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

Philip Rothhardt · Glückstadt, DE
Andreas Wolf · Glückstadt, DE
Sebastian Meier · Munich, DE
Daniel Biro · Glückstadt, DE
Sabrina Lohmüller · Glückstadt, DE

Key dates

Filing date	Dec 16, 2016
Grant date	Mar 17, 2020
Priority date	—
Expiry date	Dec 16, 2036

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for doping semiconductor substrates by means of a co-diffusion process. First, semiconductor substrates are coated at least on one side with a layer containing at least one first dopant. Two of said substrates in each case are arranged in a process chamber in such a way that two of the coated sides thereof are brought in direct contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.