Method and apparatus for within-wafer profile localized tuning
US10593554B2 · kind B2 · utility
1Cited by
11References
12Claims
0Family size
Inventor
Key dates
| Filing date | Mar 30, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Mar 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for within-wafer profile localized tuning is disclosed. In one aspect, the method includes providing a wafer attached to a rotating vacuum stage front side up, the wafer including a surface film with an incoming film thickness profile, providing a pad attached to a rotating head front side down, the head configured to sweep along a path, computing a film thickness removal amount based upon the incoming film thickness profile, and removing at least a portion of the surface film of the wafer based on the computed film thickness removal amount via a plurality of steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.