Semiconductor device and method for manufacturing semiconductor device
US10593751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2017 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Apr 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0465
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a semiconductor device capable of satisfactorily securing a breakdown voltage not only in a cell region but also in an edge termination region in a super junction structure. A semiconductor device according to the present invention includes a drift region of a first conductivity type and a pillar region of a second conductivity type a RESURF layer formed across a plurality of the pillar regions in an edge termination region and extending in the thickness direction from surfaces of the drift region and the pillar region, and a high-concentration region of the second conductivity type formed in a surface of the RESURF layer, the high-concentration region being higher in impurity concentration than the RESURF layer, no pillar region being formed under the high-concentration region in the thickness direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.