Nitride semiconductor substrate and method for manufacturing the same
US10593790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Mar 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure for increasing the concentration of two-dimensional electron gas without lowering mobility is provided. That is, a nitride semiconductor substrate is provided which includes a first layer, a second layer, and a third layer. The first layer has a composition of Ina1Alb1Gac1N (0≤a1≤1, 0≤b1≤1, 0≤c1≤1, a1+b1+c1=1). The second layer is formed on the first layer. The second layer has a composition of Ina2Alb2Gac2N (0≤a2≤1, 0≤b2≤1, 0≤c2≤1, a2+b2+c2=1) and has a band gap different from that of the first layer. The third layer is formed on the second layer and has a composition of AjB1-jN (A is a group 13 element, B is a group 13 element or a group 14 element, A≠B, 0<j<1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.