Thin film transistor and display device including the same
US10593808B2 · kind B2 · utility
1Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Aug 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/124
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.