Device source wafers with patterned dissociation interfaces
US10593827B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Dec 4, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Dec 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A transfer-printable (e.g., micro-transfer-printable) device source wafer comprises a growth substrate comprising a growth material, a plurality of device structures comprising one or more device materials different from the growth material, the device structures disposed on and laterally spaced apart over the growth substrate, each device structure comprising a device, and a patterned dissociation interface disposed between each device structure of the plurality of device structures and the growth substrate. The growth material is more transparent to a desired frequency of electromagnetic radiation than at least one of the one or more device materials. The patterned dissociation interface has one or more areas of relatively greater adhesion each defining an anchor between the growth substrate and a device structure of the plurality of device structures and one or more dissociated areas of relatively lesser adhesion between the growth substrate and the device structure of the plurality of device structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.