Processes for improving efficiency of light emitting diodes
US10593901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2016 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | May 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for improving the external quantum efficiency of a light emitting diode (LED) is provided by exposing one or more components of an LED, a partially assembled LED, or a completely assembled LED to an amount of hydrogen or hydrogen gas, or to an atmosphere containing higher quantities of hydrogen or hydrogen gas for a period of exposure time. Kits and processes for constructing a light emitting diode having an improved external quantum efficiency is further provided, which includes exposing one or more components of an LED, a partially assembled LED, or a completely assembled LED to an amount of hydrogen or hydrogen gas, or to an atmosphere containing higher quantities of hydrogen or hydrogen gas for a period of exposure time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.