Gallium nitride power amplifier
US10594272B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Dec 19, 2017 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Dec 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gallium nitride (GaN) power amplifier having a plurality of amplifier stages integrated into a monolithic integrated circuit is disclosed. The plurality of amplifier stages is coupled together between a radio frequency signal input and a radio frequency signal output, wherein at least one of the plurality of amplifier stages includes a first GaN transistor that is configured to have a first breakdown voltage that is no more than 75% of a second breakdown voltage of a second GaN transistor included in a different one of the plurality of amplifier stages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.