High-precision laser machining method for sapphire submicron-order section
US10596663B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2017 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Aug 19, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/54
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present disclosure relates to a method for high precision laser processing of sapphire with submicron-order section plane using a picosecond-order pulse laser which has high transmittance wavelength to sapphire. The laser triggers ultrafine phase transformation points or electronic state removal points from a lower surface of sapphire. After elevating focal points, a trace which is parallel to laser incident direction is formed. Under a chemical corrosion environment, points of the laser trace are arranged to intersect with other another according to the cutting route to form the corresponding phase transformation region and electronic state removal region. At the same time, by utilizing the catalysis effect of microthermal effect of picosecond laser on chemical corrosion, separation of the sapphire sample along the processing path is obtained. The present disclosure overcomes the limitation of Gaussian beam focusing mode and realizes high precision sapphire cutting with zero tapers and no heat-affected zone. Cutting of hyperfine sapphire and other materials with the high quality cutting surface in micron and submicron ranges with no limitation on the thickness and process path…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.