Reduction of surface roughness in epitaxially grown germanium by controlled thermal oxidation
US10600640B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Jun 15, 2017 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Jun 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30604
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for reducing surface roughness of germanium are described herein. In some embodiments, the surface roughness is reduced by thermal oxidation of germanium. In some embodiments, the surface roughness is further reduced by controlling a rate of the thermal oxidation. In some embodiments, the surface roughness is reduced by thermal annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.