Method of forming thin film and method of manufacturing integrated circuit device using the same
US10600643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2018 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | May 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300° C. to about 600° C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300° C. to about 600° C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.