Semiconductor device and method of manufacturing thereof
US10600838B2 · kind B2 · utility
4Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2015 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Apr 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.