Semiconductor device
US10600904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2018 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Apr 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/141
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to one embodiment includes: a semiconductor substrate having a first surface and a second surface which is an opposite surface of the first surface; a first wiring and a second wiring disposed on the first surface; a first conductive film electrically connected to the first wiring; and a gate electrode. The semiconductor substrate has a source region, a drain region, a drift region, and a body region. The drift region is disposed so as to surround the body region in a plan view. The first wiring has a first portion disposed so as to extend across a boundary between the drift region and the body region in a plan view, and electrically connected to the drift region. The second wiring is electrically connected to the source region. The first conductive film is insulated from and faces the second wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.