Avalanche photodiode
US10600931B2 · kind B2 · utility
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2References
10Claims
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Key dates
| Filing date | Nov 8, 2018 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Nov 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
Abstract
An avalanche photodiode includes: a first contact layer; a light absorbing layer located on the first contact layer and having a multi-quantum well structure; a first electric field control layer located on the light absorbing layer; and a carrier multiplication layer located on the first electric field control layer. At least one of the multi-quantum well structure includes a well layer that includes Ga1-xAlxN (0≤X≤0.3), and a barrier layer that includes Ga1-xAlxN (0.7≤X≤1) and a doping portion doped with a p-type dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.