Manufacturing method of optoelectronic semiconductor device
US10600932B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 4, 2019 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Mar 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0362
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of an optoelectronic semiconductor device includes: providing a matrix substrate, which comprises a substrate and a matrix circuit disposed on the substrate; transferring a plurality of micro-sized optoelectronic semiconductor elements from a temporary substrate to the matrix substrate, wherein the micro-sized optoelectronic semiconductor elements are separately disposed on the matrix substrate, and at least one electrode of each micro-sized optoelectronic semiconductor element is electrically connected with the matrix circuit; forming a protective layer completely covering the micro-sized optoelectronic semiconductor elements, wherein the height of the protective layer is greater than the height of the micro-sized optoelectronic semiconductor elements; and grinding the protective layer until a residual on a back surface of each micro-sized optoelectronic semiconductor element and the back surface are removed to expose a new surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.