Light-emitting device with tunnel junction
US10600938B2 · kind B2 · utility
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7References
20Claims
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Assignee
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Key dates
| Filing date | May 18, 2018 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | May 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.