Method for the production of wafers of nitride of element 13, having a non-zero truncation angle
US10604864B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2015 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Dec 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method for production of wafers of nitrides of element (13) (5a, 5b, 5c, 5d) from a self-supported crystal of nitride of element (13), extending longitudinally along a main axis orthogonal to a growth face of the crystal and passing through the centre of said growth face, the crystal (10) having a truncation angle with a non-zero value, remarkable in that the method comprises a phase of cutting the self-supported crystal along the transverse cutting planes of the crystal in order to obtain wafers of nitride of element (13), each wafer including a front face having a non-zero truncation angle in the vicinity of the centre of the front face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.