Method and apparatus for measuring a size of a crystal grain, and method for fabricating a poly-silicon thin film
US10605596B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 25, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Jul 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02686
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The disclosure discloses a method and apparatus for measuring a size of a crystal grain, and a method for fabricating a poly-silicon thin film. The method for measuring the size of the crystal grain includes: obtaining a grain morphology image of a crystalline region of a crystal, and drawing a grain interface diagram according to the grain morphology image; measuring at least one crystal grain in the grain interface diagram, and determining a transverse size and a longitudinal size of each measured crystal grain; and determining a transverse size and a longitudinal size of a crystal grain of the crystal according to the transverse size and the longitudinal size of each measured crystal grain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.