Patent · US Active

Piezoelectric film sensor and holding state detecting device

US10605678B2 · kind B2 · utility

3Cited by
9References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 25, 2017
Grant dateMar 31, 2020
Priority date
Expiry dateJul 27, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/802
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Disclosed is a piezoelectric film sensor including an insulating substrate having a first electrode formed on at least one main surface thereof, a piezoelectric film which has a first main surface and a second main surface and in which the first main surface is provided on the first electrode side, and a conductive thin film member provided on the second main surface side. The piezoelectric film sensor is characterized in that the first main surface is disposed on a pressing surface side.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.