Patent · US Active

SIPM sensor chip

US10605931B2 · kind B2 · utility

0Cited by
2References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 2, 2016
Grant dateMar 31, 2020
Priority date
Expiry dateApr 26, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/18
  • WIPO fieldEnvironmental technology
  • WIPO sectorChemistry

Abstract

A SiPM sensor chip with a plurality of pixels includes a photodiode; a quench resistor; and a current divider configured to divide the photocurrent of the photodiodes into two currents of equal size. The current divider Sq,nm or Snm lead to networks NS,h,n and NS,V,m, each of which leads to additional current dividers Sh,n and Sv m having coding resistors Rh,A,n and Rh,B,n, and Rv,c,m and Rv D m, which are linearly coded and which lead to output channels A, B, C, D, with these sensor features being integrated into the sensor chip. The networks Ns,h,n and/or NSiVlm each lead to a summation network Oh and/or Ov, in which the signals of the networks Ns,h,n and/or NS,v,m are merged via summation resistors Rs,h,n and Rs,v,m, respectively, and lead to the output channels E and/or F.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.