Circuit for regulating leakage current in charge pump
US10606299B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Dec 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/07
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit for regulating a leakage current in a charge pump is disclosed. The circuit includes a bias voltage generating circuit and a first transistor, wherein: the bias voltage generating circuit generates a bias voltage that is proportional to a supply voltage; a gate of the first transistor is coupled to the bias voltage; the first transistor has a drain that is coupled to an output of the charge pump and a source that is grounded; a voltage the drain of the first transistor is proportional to the supply voltage; and a current flowing through the source and drain of the first transistor is proportional to the supply voltage that powers the charge pump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.