Silicon electron emitter designs
US10607806B2 · kind B2 · utility
0Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Oct 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67288
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Electron source designs are disclosed. The emitter structure, which may be silicon, has a layer on it. The layer may be graphene or a photoemissive material, such as an alkali halide. An additional layer between the emitter structure and the layer or a protective layer on the layer can be included. Methods of operation and methods of manufacturing also are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.