Semiconductor device with p-type AlxInyGal-x-yN and ohmic electrode thereof
US10607840B2 · kind B2 · utility
2Cited by
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14Claims
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Key dates
| Filing date | Mar 20, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Mar 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate; a p-type GaN layer that is formed above the substrate, and includes GaN containing p-type impurities; and a Ti film formed on a surface of the p-type GaN layer. The Ti film includes a Ti film containing no nitrogen and a nitrogen-containing Ti film that is less chemically active than such Ti film. The nitrogen-containing Ti film continuously surrounds an outer periphery of the Ti film containing no nitrogen in a planar view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.