High-density triple diamond stripline interconnects
US10607952B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Aug 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19031
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with embodiments disclosed herein, there is provided a high density triple diamond stripline interconnect. An interconnect includes a first reference layer, a second reference layer disposed below the first reference layer, and a dielectric disposed between the first reference layer and the second reference layer. The interconnect further includes a first pair of conductors including a first conductor and a second conductor that are in a broadside-facing orientation within the dielectric below the first reference layer and above the second reference layer. The interconnect further includes a second pair of conductors including a third conductor and a fourth conductor that are in an edge-facing orientation within the dielectric below the first conductor and above the second conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.