Bipolar-CMOS-DMOS semiconductor device and manufacturing method

US10607987B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Ming Qiao · Chengdu, CN
• Song PU · Chengdu, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Jan 24, 2019
• Grant date: Mar 31, 2020
• Expiry date: Jan 24, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/013

Abstract

A BIPOLAR-CMOS-DMOS (BCD) semiconductor device and manufacturing method, which can integrate a Junction Field-Effect Transistor (JFET), two classes of Vertical Double-diffusion Metal Oxide Semiconductor (VDMOS), a Lateral Insulated-Gate Bipolar Transistor (LIGBT) and seven kinds of Laterally Diffused Metal Oxide Semiconductor (LDMOS), a low-voltage Negative channel Metal Oxide Semiconductor (NMOS), a low-voltage Positive channel Metal Oxide Semiconductor (PMOS), a low-voltage Negative-Positive-Negative (NPN) transistor and a low-voltage Positive-Negative-Positive (PNP) transistor, and a diode in the same chip. Bipolar devices in the analog circuit, power components in the switch circuit, Complementary Metal Oxide Semiconductor (CMOS) devices in the logic circuit and other kinds of lateral and vertical components are integrated. This present invention saves costs at the same time greatly improve chip integration. The manufacturing method of the present invention is simple, and the difficulty of process is relatively less.