Semiconductor device for high voltage isolation
US10608077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Jul 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/82
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate of a first conductivity type with relatively low impurity concentration; a first region of a second conductivity type with relatively low impurity concentration, =located in the substrate; a second region of the first conductivity type with relatively high impurity concentration, located in the substrate; first and second conductors, located on the first region and separated from each other by an isolator layer; and a third conductor, separated from the first and second conductors by the isolator layer, and located on the second region. The first conductor provides a drain terminal. The second conductor provides a source terminal. The third conductor provides a gate terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.