Thin film transistor and method of fabricating same, array substrate and display device

US10608089B2 · kind B2 · utility

Assignees

• BOE Technology Group Co., Ltd. · CN
• Ordos Yuansheng Optoelectronics Co., Ltd. · CN

Inventors

• Xinguo Wu · Beijing, CN
• Fengguo Wang · Beijing, CN
• Dawei Shi · Beijing, CN
• Hong-Da Liu · Beijing, CN
• Zifeng Wang · Kowloon, CN
• Feng Li · Beijing, CN
• Bo MA · Taichung, TW
• Zhixuan Guo · Beijing, CN
• Yuanbo Li · Luoyang, CN
• Cenhong DUAN · Beijing, CN
• Jing Zhao · Nanhu, CN

Key dates

• Filing date: Sep 5, 2018
• Grant date: Mar 31, 2020
• Expiry date: Sep 5, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The present application provides a thin film transistor, an array substrate, a display device and a method of fabricating a thin film transistor. According to embodiments of the present application, the thin film transistor includes: a substrate; a first source/drain electrode on the substrate; an active layer at a side of the first source/drain electrode facing away from the substrate; and a second source/drain electrode at a side of the active layer facing away from the first source/drain electrode. The first source/drain electrode and the second source/drain electrode are electrically connected to the active layer independently.