Semiconductor device and method for manufacturing the same
US10608091B2 · kind B2 · utility
0Cited by
20References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Sep 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes forming a conductive pattern on a substrate, forming a filling insulation layer covering the conductive pattern, forming a contact hole in the filling insulation layer and adjacent to the conductive pattern, forming an opening in the conductive pattern by removing a portion of the conductive pattern adjacent to the contact hole such that the opening is connected to the contact hole, and forming a contact plug filling the contact hole and the opening. A width of the opening is greater than a width of the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.