MOS field-effect transistor and method for the production thereof

US10608105B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Michael Grieb · Renningen, DE
• Achim Trautmann · Leonberg, DE
• Ning Qu · Beijing, CN

Key dates

• Filing date: Mar 11, 2014
• Grant date: Mar 31, 2020
• Expiry date: Mar 11, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A substrate for a metal oxide semiconductor field effect transistor, and a metal oxide semiconductor field effect transistor, are made available. The substrate encompasses: an n-doped epitaxial drift zone, a p−-doped epitaxial first layer disposed on the drift zone, a heavily n-doped second layer disposed on the first layer, and a terminal formed by p+ implantation, the first layer being in electrical contact with the terminal and being disposed laterally between the terminal and a trench, the trench being formed in the drift zone, in the first layer, and in the second layer. The substrate is characterized in that an implantation depth (P) of the p+ implantation is at least as great as a depth of the trench. The deep p+ implantation can separate adjacent trenches in such a way that a field can no longer attack a gate oxide because it is directed around the gate oxide.