Power semiconductor devices

US10608106B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Ming Qiao · Chengdu, CN
• Zhengkang Wang · Chengdu, CN
• Ruidi WANG · Tianjin, CN
• Zhao Qi · Chengdu, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Apr 18, 2018
• Grant date: Mar 31, 2020
• Expiry date: Apr 18, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

A power semiconductor device including a first conductivity type semiconductor substrate, a drain metal electrode, a first conductivity type semiconductor drift region, and a second conductivity type semiconductor body region. The second conductivity type semiconductor body region includes a first conductivity type semiconductor source region and anti-punch-through structure; the anti-punch-through structure is a second conductivity type semiconductor body contact region or metal structure; the lower surface of the anti-punch-through structure coincides with the upper surface of the first conductivity type semiconductor drift region or the distance between the two is less than 0.5 μm, so that make the device avoid from punch-through. An anti-punch-through structure is introduced at the source end of the device to avoid punch-through breakdown caused by short channel and light-doped body region.