Magnetic tunnel junction device with spin-filter structure
US10608169B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2017 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Jun 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic device includes a conductive layer into which current can be injected in a first direction, the conductive layer causing spin Hall effect or Rashba effect. A ferromagnetic layer is disposed in contact with the conductive layer such that the ferromagnetic layer and the conductive layer are stacked on each other, a magnetization direction of the ferromagnetic layer being switched. A spin filter structure has a fixed magnetization direction, the spin filter structure being disposed on at least one of the opposite side surfaces of the first direction of the conductive layer to inject spin-polarized current into the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.