Patent · US Active

Polycrystalline dielectric thin film and capacitor element

US10611693B2 · kind B2 · utility

0Cited by

1References

8Claims

0Family size

Assignee

TDK CORPORATION · JP

Inventors

Kumiko Yamazaki · Rifu, JP
Hiroshi Chihara · Soma, JP
Yuki Nagamine · Tokyo, JP
Junichi Yamazaki · Mishima, JP

Key dates

Filing date	Feb 1, 2017
Grant date	Apr 7, 2020
Priority date	—
Expiry date	Feb 1, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/692
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

A polycrystalline dielectric thin film and capacitor element has a small dielectric loss tan δ. The polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n=5), where a/b>1 and n≥0.7.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.