Patent · US Active

InP quantum dots with GaP and AlP shells and methods of producing the same

US10611958B2 · kind B2 · utility

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Key dates

Filing dateJun 29, 2018
Grant dateApr 7, 2020
Priority date—
Expiry dateJun 29, 2038

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/95
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.