Etchant composition and manufacturing method of metal pattern using the same
US10611962B2 · kind B2 · utility
4Cited by
3References
20Claims
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Key dates
| Filing date | Apr 22, 2019 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Apr 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An etchant composition is presented. The composition includes: 18 wt % to 25 wt % of a first organic acid compound; 15 wt % to 20 wt % of a second organic acid compound; 8.1 wt % to 9.9 wt % of an inorganic acid compound; 1 wt % to 4.9 wt % of a sulfonic acid compound; 10 wt % to 20 wt % of a hydrogen sulfate salt compound; 1 wt % to 5 wt % of a nitrogen-containing dicarbonyl compound; 1 wt % to 5 wt % of an amino acid derivative compound; 0.1 wt % to 2 wt % of an iron-containing oxidizing agent compound; and a balance amount of water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.