Electron beam resist composition
US10613441B2 · kind B2 · utility
1Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2018 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Nov 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3175
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.