Thin-film transistor and method of manufacturing the same, array substrate, and display apparatus
US10615051B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 18, 2018 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | May 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an embodiment, there is provided a method of manufacturing a thin-film transistor. The method includes steps of: forming a gate, a gate insulator layer and an active layer on a base substrate, wherein, the gate and the active layer are provided at upper and lower sides of the gate insulator layer, respectively, and the active layer contains impurity ions therein; and, while implementing an annealing on the active layer, applying a voltage between the active layer and the gate to generate an electrical field therebetween, a direction of the electrical field being configured such that the impurity ions move from the active layer into the gate insulator layer. Meanwhile, there are also provided a thin-film transistor, an array substrate and a display apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.