Semiconductor device including a fuse element
US10615120B2 · kind B2 · utility
0Cited by
5References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2018 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Mar 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a fuse element arranged on an interlayer insulating film formed on a semiconductor substrate. The fuse element is formed of polysilicon and a silicide region arranged on an upper surface of the polysilicon. A region of the polysilicon included in a range to be irradiated with a laser beam in plan view is non-doped polysilicon into which impurities are not introduced. With this structure, it is possible to provide the semiconductor device including the fuse element, which can be stably cut with a laser beam while an underlying film is not damaged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.