Transistor, semiconductor device, and electronic device
US10615187B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2017 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Jul 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/471
Abstract
A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.